IRF9Z30 Transistor Datasheet, IRF9Z30 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. IRF9Z30 Hexfet Power Mosfet. Features. P-Channel Verasatility Compact Plastic Package Fast Switching Low Drive Current Ease of Paralleling Excellent. Parameters provided in datasheets and / or specifications may vary in different applications IRFZ30 IRF9Z30 IRFZ30PBF SUP40NE3 FESB8AT-E3/

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Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. All operating parameters, including typical parameters, must be validated for each customer application by the irf9s30 s technical experts. Rif9z30 specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein.

Absolute Maximum Ratings Parameter Max.


Q g typical nc 27 A. To make this website work, we log user data and share it with processors. R DS on max. A Qualified More information. They are also very useful in drive stages because of the circuit versatility offered by the reverse polarity connection. Such statements are not binding statements about the suitability of products for a particular application.


Except as expressly indicated in writing, Vishay products are not designed for use in medical, lifesaving, or lifesustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death.

IRF9Z30 Datasheet

A, 4Dec 3 Document Number: Pchannel power MOSFETs are intended for use in power stages where complementary symmetry with nchannel devices offers circuit simplification. Data Sheet June File Number Switching Time Test Circuit Fig.

The efficient geometry and unique processing of the power MOSFET design achieve very low onstate resistance combined with high transconductance and extreme device ruggedness. Product names and markings noted herein may be trademarks of their respective owners. This advanced technology More information.

Please contact authorized Vishay personnel to obtain written terms and dafasheet regarding products designed for such applications. High Performance Schottky Rectifier, 3. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Products may be manufactured at one of several qualified locations. High Performance Schottky Rectifier, 1.


IRF9Z30 MOSFET Datasheet pdf – Equivalent. Cross Reference Search

N-channel 60 V, 0. Typical Transfer Characteristics Fig. Repetitive rating; pulse width limited by maximum junction temperature see fig.

N-channel 55 V, 4. Thermal Resistance Symbol Parameter Typ. Order code Marking Package Packing. N-channel 60V – 0. A, 4Dec Document Number: Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. Applications include motor control, audio amplifiers, switched mode converters, control circuits and pulse amplifiers.

Maximum Drain Current vs. C Soldering Temperature, for 10 seconds 1.

IRF9Z30 – (IRF9Z30 / IRF9Z34) P-Channel Power MOSFETs

Typical Gate Charge vs. A, 4Dec 6 Document Number: This device is suitable More information. N-channel 80 Dataseet, 0. They retain all of the features of the more common nchannel Power MOSFET s such as voltage control, very fast switching, ease of paralleling, and excellent temperature stability. Storage Temperature Range Soldering Temperature, for 10 seconds 1. Start display at page:.