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Clamped Inductive Load Current R.

IRG4PC50UD Datasheet

Junction-to-Ambient, typical socket mount. Ga te d rive a s spe cified. Case-to-Sink, flat, greased surface. Ga te d rive a s irg4pc50us cified.

IRG4PC50UD datasheet, IRG4PC50UD datasheets, manuals for IRG4PC50UD electornic semiconductor part

T Pulse width 5. Q gTotal Gate Charge nC. Clamped Inductive Load Current R. Irg4pc05ud Pulse width 5. Pulsed Collector Current Q. Generation 4 IGBT’s offer highest efficiencies.

Optimized for datashdet operating. Energy losses include “tail” and. Du ty c ycle: Junction-to-Ambient, typical socket mount. Diode Forward Voltage Drop. Gate – Emitter Charge turn-on.


Diode Forward Voltage Drop. T JJunction Temperature? Diode Peak Reverse Recovery Current. Generation 4 IGBT’s offer highest efficiencies.

V CE on typ. Diode Maximum Forward Current. C unless otherwise specified. Diode Reverse Recovery Time.

Diode Continuous Forward Current. Pulsed Collector Current Q. T JJunction Temperature? Visit us at www. Soldering Temperature, for 10 sec. Gate – Collector Charge turn-on. Designed to be a “drop-in” replacement for equivalent. Optimized for high operating. Zero Gate Voltage Collector Current. Total Gate Irg4pc0ud turn-on. Diode Peak Rate of Fall of Recovery.